Nanoscale triboelectrification gated transistor

In situ quantitative study of nanoscale triboelectrification and patterning.

By combining contact-mode atomic force microscopy (AFM) and scanning Kevin probe microscopy (SKPM), we demonstrated an in situ method for quantitative characterization of the triboelectrification process at the nanoscale. We systematically characterized the triboelectric charge distribution, multifriction effect on charge transfer, as well as subsequent charge diffusion on the dielectric surfac...

Scattering Theory of the Nanoscale MOS Transistor

Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser

In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...

Performance Simulation of Nanoscale Silicon Rod Field-Effect Transistor Logic

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RGFET) using the PISCES-IIb[1] semiconductor driftdiffusion solver. The results from these simulations are used by a customized SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a selfassembling fabrication technique t...

Transport Simulation of a Nanoscale Silicon Rod Field-Effect Transistor

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (O-FET) using the PISCES-IIb[1] semiconductor drift-diffusion solver. The results from these simulations are used by a custom SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique tha...